inchange semiconductor product specification silicon npn power transistors 2n4921 2n4922 2N4923 description ? ? with to-126 package ? complement to type 2n4918/4919/4920 ? excellent safe operating area ? low collector saturation voltage applications ? for driver circuits ,switching ,and amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2n4921 40 2n4922 60 v cbo collector-base voltage 2N4923 open emitter 80 v 2n4921 40 2n4922 60 v ceo collector-emitter voltage 2N4923 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 1 a i cm collector current-peak 3 a i b base current 1 a p d total power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.16 ??/w
inchange semiconductor product specification 2 silicon npn power transistors 2n4921 2n4922 2N4923 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n4921 40 2n4922 60 v ceo(sus) collector-emitter sustaining voltage 2N4923 i c =0.1a; i b =0 80 v v cesat collector-emitter saturation voltage i c =1.0a ;i b =0.1a 0.6 v v besat base-emitter saturation voltage i c =1.0a ;i b =0.1a 1.3 v v be base-emitter on voltage i c =1a ; v ce =1v 1.3 v 2n4921 v ce =20v; i b =0 2n4922 v ce =30v; i b =0 i ceo collector cut-off current 2N4923 v ce =40v; i b =0 0.5 ma i cbo collector cut-off current v cb = rated v cbo ;i e =0 0.1 ma i cex collector cut-off current v ce = rated v ceo ; v be(off) =1.5v t c =125 ?? 0.1 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =50ma ; v ce =1v 40 h fe-2 dc current gain i c =500ma ; v ce =1v 30 150 h fe-3 dc current gain i c =1a ; v ce =1v 10 f t transition frequency i c =250ma ; v ce =10v;f=1mhz 3.0 mhz c ob output capacitance f=100khz ; v cb =10v;i e =0 100 pf
inchange semiconductor product specification 3 silicon npn power transistors 2n4921 2n4922 2N4923 package outline fig.2 outline dimensions
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